ATP206
Features
- -
- -
- N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free pliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
- 1 Avalanche Current
- 2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 40 ±20 40 120 40 150 --55 to +150 26 20 Unit V V A A W °C °C m J A
Note :
- 1 VDD=10V, L=100μH, IAV=20A
- 2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1m A, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V Ratings min 40 1 ±10 typ max Unit V μA μA
Marking : ATP206
Continued on next page.
Any and...
