High breakdown voltage. Package Dimensions
unit:mm 2033
[2SA1481/2SC2960]
( ) : 2SA1481
B : Base C : Collector E : Emitter SANYO : SPA
Conditions Ratings (.
)60 (.
)50 (.
)5 (.
)150 (.
)400 250 150.
55 to +150 Unit V V V mA mA mW
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collec.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
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Ordering number:EN829H
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1481/2SC2960
High-Speed Switching Applications
Features
· Fast switching speed. · High breakdown voltage.
C2960 Datasheet
