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C3685 - 2SC3685

Key Features

  • Fast speed (tf typ=100ns).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO :.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3686 2SC3686
C3688 2SC3688
C3636 2SC3636
C3642 2SC3642
C3654 2SC3654

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1937A NPN Triple Diffused Planar Silicon Transistor 2SC3685 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications · Ultrahigh-definition color display horizontal deflection output. Package Dimensions unit:mm 2022A [2SC3685] Features · Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.