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Ordering number : ENA0114
CPH3360
SANYO Semiconductors
DATA SHEET
CPH3360
Features
• • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=233mΩ(typ.) 4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --1.6 --6.4 0.