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Sanyo Electric Components Datasheet

CPH3455 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8737
CPH3455
SANYO Semiconductors
DATA SHEET
CPH3455
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=80mΩ(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
35
±20
3
12
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
51811PE TKIM TC-00002566 No.8737-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

CPH3455 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
CPH3455
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=20V, VGS=10V, ID=3A
VDS=20V, VGS=10V, ID=3A
VDS=20V, VGS=10V, ID=3A
IS=3A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
PW=10μs
D.C.1%
VIN
G
VDD=15V
ID=1.5A
RL=10Ω
D VOUT
P.G 50Ω S CPH3455
min
35
Ratings
typ
1.2
1.7
80
123
148
186
36
22
4.2
4.7
15
5.7
4
0.9
0.7
0.86
max
1
±10
2.6
104
173
208
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
3.0 ID -- VDS
2.5
2.0
1.5
1.0
VGS=3.0V
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16442
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT16443
No.8737-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH3455
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH3455 Datasheet PDF






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