CPH3457
CPH3457 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
- -
- N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=73mΩ(typ.) 1.8V drive Halogen free pliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±12 3 12 1.0 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions unit : mm (typ) 7015A-004
Product & Package Information
- Package : CPH3
- JEITA, JEDEC : SC-96, SC-95, SOT346, SOT457
- Minimum Packing Quantity : 3,000 pcs./reel
2.9 0.6 3
Packing Type: TL
Marking
LOT No.
1 0.95
2 0.4
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Electrical Connection
2 http://semicon.sanyo./en/network
90110PE TK IM TC-00002460 No. A1804-1/4
Datasheet pdf
- http://..net/
.Data Sheet.co.kr
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1m A, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=1.5A ID=1.5A, VGS=4.5V ID=0.75A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=4.5V, ID=3A VDS=15V, VGS=4.5V, ID=3A VDS=15V, VGS=4.5V, ID=3A...
