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Sanyo Electric Components Datasheet

CPH5801 Datasheet

DC/DC Converter Applications

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Ordering number:EN6427
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
CPH5801
DC/DC Converter Applications
Features
· The CPH5801 composite device consists of follow-
ing two devices to facilitate high-density mounting.
One is an N-channel MOSFET that features low ON
resistance, high-speed switching, and low driving
voltage. The other is a shottky barrier diode that
features short reverse recovery time and low forward
voltage.
· Each device incorporated in the CPH5801 is equiva-
lent to the 2SK3119 and to the SBS005, respectively.
Package Dimensions
unit:mm
2171
[CPH5801]
2.9
543
0.15
0.05
1
0.95
2
0.4
Specifications
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
0.4 SANYO : CPH5
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2×0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
20
±10
1.4
5.6
0.9
150
–55 to +125
V
V
A
A
W
˚C
˚C
30
30
1
10
–55 to +125
–55 to +125
V
V
A
A
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2491 No.6427–1/5


Sanyo Electric Components Datasheet

CPH5801 Datasheet

DC/DC Converter Applications

No Preview Available !

CPH5801
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : QA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=4V
ID=400mA, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=2A
VR=15V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2×0.8mm)
Electrical Connection (Top view)
ASG
Ratings
min typ max
Unit
20 V
10 µA
±10 µA
0.4 1.3 V
1.8 2.5
S
200 260 m
260 360 m
90 pF
60 pF
28 pF
10 ns
20 ns
20 ns
20 ns
6 nC
1 nC
2 nC
0.9 1.2 V
30 V
0.35
0.4 V
0.42 0.47 V
500 µA
35 pF
15 ns
110 ˚C/W
CD
Switching Time Test Circuit
[MOSFET block]
VIN
4V
0V
PW=10µs
D.C.1%
VIN
G
VDD=10V
ID=700mA
RL=14.3
VOUT
D
P.G 50
CPH5801
S
Reverse Recovery Time Test Circuit
[SBD block]
Duty10%
10µs 50
100
10
--5V
trr
No.6427–2/5


Part Number CPH5801
Description DC/DC Converter Applications
Maker Sanyo Semicon Device
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CPH5801 Datasheet PDF






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