CPH5801
CPH5801 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
- The CPH5801 posite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that Features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that Features short reverse recovery time and low forward voltage.
- Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
Package Dimensions unit:mm 2171
[CPH5801]
2.9 5 4 3
1 0.95
2 0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Symbol Conditions
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
Ratings 20 ±10 1.4 5.6 0.9 150
- 55 to +125 30 30 1 10
- 55 to +125
- 55 to +125
Unit V V A A W
˚C ˚C
Mounted on a ceramic board (600mm2×0.8mm) 1unit
˚C ˚C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products...
