CPH5801
Overview
- The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage.
- Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
