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CPH5801 - N-Channel Silicon MOSFET

Key Features

  • The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage.
  • Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. Package Dimensions unit:mm 2171 [CPH5801] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. Package Dimensions unit:mm 2171 [CPH5801] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.