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CPH5805 - N-Channel Silicon MOSFET

Key Features

  • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. [CPH5805] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 0.7 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SAN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. [CPH5805] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 0.7 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.