Datasheet Summary
Ordering number:EN6427
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
DC/DC Converter Applications
Features
- The CPH5801 posite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that Features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that Features short reverse recovery time and low forward voltage.
- Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
Package Dimensions unit:mm 2171
[CPH5801]
2.9 5 4 3
1 0.95
2 0.4
Specifications...