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CPH5815 - DC / DC Converter Applications

Key Features

  • Package Dimensions.
  • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3317) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive. [SBD] 1) Short reverse recovery time. 2) Low forward voltage. [CPH5815] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 0.7 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2.

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CPH5810 P-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7381 CPH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5815 DC / DC Converter Applications Features • Package Dimensions • • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3317) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive. [SBD] 1) Short reverse recovery time. 2) Low forward voltage. [CPH5815] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 0.7 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.