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Sanyo Electric Components Datasheet

CPH5854 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA0516
CPH5854
SANYO Semiconductors
DATA SHEET
CPH5854
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),
facilitating high-density mounting.
[MOS]
Low ON-resistance
Ultrahigh-speed switching
4V drive
[SBD]
Short reverse recovery time
Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : YG
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1cycle
Ratings
Unit
--30
±20
--2
--8
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
30
35
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90606PE MS IM TC-000001G63I INMo. A0516-1/6


Sanyo Electric Components Datasheet

CPH5854 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

CPH5854
Electrical Characteristics at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGSS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--500mA, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
VR IR=0.5mA
VF1 IF=0.7A
VF2 IF=1.0A
IR VR=16V
C VR=10V, f=1MHz cycle
trr IF=IR=100mA, See specified Test Circuit.
Ratings
min typ max
Unit
--30
--1.2
1.2 2.0
110
205
200
47
32
7.2
2.9
21
8.7
5.5
0.98
0.82
--0.85
V
--1 µA
±10 µA
--2.6 V
S
145 m
290 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
30 V
0.45
0.5 V
0.48
0.53 V
15 µA
27 pF
10 ns
Package Dimensions
unit : mm (typ)
7017A-010
2.9
5 43
1
0.95
2
0.4
0.15
0.05
1 : Drain
2 : Cathode
3 : Anode
4 : Source
5 : Gate
Electrical Connection
5 43
1 : Drain
2 : Cathode
3 : Anode
4 : Source
5 : Gate
Top view
12
SANYO : CPH5
No. A0516-2/6


Part Number CPH5854
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH5854 Datasheet PDF





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