CPH5855 - N-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

CPH5855 n-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	CPH5855
Manufacturer	SANYO (now Panasonic)
File Size	91.66 KB
Description	N-Channel Silicon MOSFET
Datasheet	CPH5855 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0670 CPH5855 CPH5855 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converters. Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2✕0.8mm) 1unit 20 ±10 2.5 10 0.