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CPH6341 - P-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA1084 CPH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6341 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --30 ±20 --5 --20 1.
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