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Sanyo Electric Components Datasheet

CPH6623 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA0423
CPH6623
SANYO Semiconductors
DATA SHEET
CPH6623
Features
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Ratings
--30
±20
--1.5
--6.0
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : WJ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--30
--1.2
0.9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
1.5 S
210 275 m
350 490 m
185 pF
30 pF
20 pF
7 ns
4 ns
22 ns
8 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002418 No. A0423-1/4


Sanyo Electric Components Datasheet

CPH6623 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7018A-010
2.9
654
12
0.95
3
0.4
CPH6623
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, VGS=--10V, ID=--1.5A
VDS=--10V, VGS=--10V, ID=--1.5A
VDS=--10V, VGS=--10V, ID=--1.5A
IS=--1.5A, VGS=0V
min
Electrical Connection
Ratings
typ
4.7
0.8
0.7
--0.88
max
--1.5
Unit
nC
nC
nC
V
0.15
0.05
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
6 54
1 23
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --0.8A
RL=18.7
D VOUT
CPH6623
P.G 50S
ID -- VDS
--2.0
--1.8 --4V
--1.6
--1.4
--1.2
--1.0 VGS= --3V
--0.8
--0.6
--0.4
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT04057
--2.0
VDS= --10V
--1.8
ID -- VGS
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT02666
No. A0423-2/4


Part Number CPH6623
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH6623 Datasheet PDF






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