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Sanyo Electric Components Datasheet

EC3H07B Datasheet

UHF to S Band Low-Noise Amplifier and OSC Applications

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Ordering number : ENN6578
EC3H07B
NPN Epitaxial Planar Silicon Transistor
EC3H07B
UHF to S Band Low-Noise Amplifier
and OSC Applications
Features
Package Dimensions
Low noise : NF=1.5dB typ (f=2GHz).
High cut-off frequency : fT=10GHz typ (VCE=1V).
: fT=12.5GHz typ (VCE=3V).
Low operating voltage.
High gain : S21e2=9.5dB typ (f=2GHz).
Ultraminiature (1006 size) and thin (0.5mm) leadless
package.
unit : mm
2183
0.15
0.05
1
0.35 [EC3H07B]
0.2
0.15
2
Specifications
Absolute Maximum Ratings at Ta=25°C
3 0.05
0.5
(Bottom View)
0.6
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Ratings
9
4
2
30
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
Conditions
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e21
S21e22
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=3mA, f=2GHz
Ratings
min typ
100
8 10
12.5
0.55
0.4
8 9.5
10.5
1.5
max
1.0
10
160
0.7
2.3
Unit
µA
µA
GHz
GHz
pF
pF
dB
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72100 TS IM TA-2555 No.6578-1/6


Sanyo Electric Components Datasheet

EC3H07B Datasheet

UHF to S Band Low-Noise Amplifier and OSC Applications

No Preview Available !

EC3H07B
Type No. Indication (Top view)
G
This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.
Electrical Connection (Top view)
Polarity mark (Top)
Base
Emitter
Collector
*Electrodes : on the bottom
Polarity mark (Top)
Base
Emitter
Collector
IC -- VCE
10
0.05mA
8 0.04mA
6 0.03mA
IC -- VBE
30
20
4 0.02mA
0.01mA
2
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0
1234
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
5
IT02240
VCE=3V
1V
10
3
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector Current, IC -- mA
IT02242
1.0 Cob -- VCB
f=1MHz
7
5
10
0
0
100
7
5
3
2
10
7
5
3
2
1.0
1.0
1.0
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
fT -- IC
IT02241
VCE=3V
1V
23
5 7 10
23
Collector Current, IC -- mA
Cre -- VCB
5 7 100
IT02243
f=1MHz
33
22
0.1
0.1
23
5 7 1.0
23
5 7 10
Collector-to-Base Voltage, VCB -- V IT02244
0.1
0.1
23
5 7 1.0
23
5 7 10
Collector-to-Base Voltage, VCB -- V IT02245
No.6578-2/6



Part Number EC3H07B
Description UHF to S Band Low-Noise Amplifier and OSC Applications
Maker Sanyo Semicon Device
Total Page 6 Pages
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EC3H07B Datasheet PDF





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