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EC3H02C - VHF to UHF Wide-Band Low-Noise Amplifier Applications

Features

  • Package Dimensions unit : mm 2184 [EC3H02C] 0.5 0.3 0.05 0.6 0.2 0.05 0.2 Low noise : NF=1.0dB typ (f=1GHz). High gain :S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultraminiature (1008 size) and thin (0.6mm) leadless package . 3 0.05 4 1.0 2 1 0.3 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 0.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Col.

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Datasheet Details

Part number EC3H02C
Manufacturer Sanyo Semicon Device
File Size 26.40 KB
Description VHF to UHF Wide-Band Low-Noise Amplifier Applications
Datasheet download datasheet EC3H02C Datasheet
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Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Package Dimensions unit : mm 2184 [EC3H02C] 0.5 0.3 0.05 0.6 0.2 0.05 0.2 Low noise : NF=1.0dB typ (f=1GHz). High gain :S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultraminiature (1008 size) and thin (0.6mm) leadless package . 3 0.05 4 1.0 2 1 0.3 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 0.
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