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EC3H02B - VHF to UHF Low-Noise Wide-Band Amplifier Applications

Features

  • Low noise : NF=1.0dB typ (f=1GHz).
  • High gain : S21e2=12dB typ (f=1GHz).
  • High cutoff frequency : fT=7GHz typ.
  • Ultrasmall (1006size), slim (0.5mm) leadless package. Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.05 1 0.4 0.15 2 0.05 1.0 0.65 0.25 3 0.5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collecto.

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Datasheet Details

Part number EC3H02B
Manufacturer Sanyo Semicon Device
File Size 41.86 KB
Description VHF to UHF Low-Noise Wide-Band Amplifier Applications
Datasheet download datasheet EC3H02B Datasheet
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Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall (1006size), slim (0.5mm) leadless package. Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.05 1 0.4 0.15 2 0.05 1.0 0.65 0.25 3 0.5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 0.
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