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Sanyo Electric Components Datasheet

EC4309C Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Ordering number : ENA1215
EC4309C
SANYO Semiconductors
DATA SHEET
EC4309C
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
1.5V drive.
Halogen Free compliance (UL94 HB).
www.DSatpaSehceeift4icU.actoimons
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on glass epoxy substrate (145mm80mm1.6mm)
Electrical Characteristics at Ta=25°C
Ratings
--30
±10
--200
--800
0.15
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--100μA
VDS=--10V, ID=--100mA
ID=--100mA, VGS=--4V
ID=--50mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
min
--30
--0.4
190
Ratings
typ
max
Unit
V
--1 μA
±10 μA
--1.4 V
320 mS
1.8 2.4 Ω
2.4 3.4 Ω
4.5 9.0 Ω
35 pF
7.2 pF
2.1 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52808PE TI IM TC-00001375 No. A1215-1/4


Sanyo Electric Components Datasheet

EC4309C Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

No Preview Available !

EC4309C
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--200mA
VDS=--10V, VGS=--4V, ID=--200mA
VDS=--10V, VGS=--4V, ID=--200mA
IS=--200mA, VGS=0V
Ratings
min typ max
Unit
75 ns
170 ns
550 ns
350 ns
0.58
nC
0.17
nC
0.12
nC
--0.89
--1.2 V
Package Dimensions
unit : mm (typ)
7036-001
Top View
0.8
www.DataShe4et4U.com 3
12
Polarity Discriminating Mark
Type No. Indication Electrical Connection
JB
Top view
Polarity mark (Top)
Gate
Source
Drain
*Electrodes : on the bottom
Top view
Polarity mark (Top)
Drain
0.5
0.2
12
43
Bottom View
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
Gate
Source
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --100mA
RL=150Ω
D VOUT
Rg
EC4309C
P.G 50Ω S
Rg=5kΩ
No. A1215-2/4



Part Number EC4309C
Description P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Maker Sanyo Semicon Device
Total Page 4 Pages
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