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Sanyo Electric Components Datasheet

ECH8302 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENN8247
ECH8302
ECH8302
Features
Low ON-resistance.
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--30
±20
--7
--40
1.6
150
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Marking : JB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3.5A
ID=--3.5A, VGS=--10V
ID=--2A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--7A
VDS=--10V, VGS=--10V, ID=--7A
VDS=--10V, VGS=--10V, ID=--7A
IS=--7A, VGS=0
min
--30
Ratings
typ
--1.0
5.7 9.5
19
34
1400
310
230
13
70
150
90
28
4.8
8.1
--0.82
max
--1
±10
--2.4
25
48
--1.2
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Unit
V
V
A
A
W
°C
°C
Unit
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TB-00000078 No.8247-1/4


Sanyo Electric Components Datasheet

ECH8302 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

Package Dimensions
unit : mm
2222A
0.3
8
5
1
0.65
2.9
4
ECH8302
Electrical Connection
87 6 5
0.15
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
12 3 4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --3.5A
RL=4.3
D VOUT
ECH8302
P.G 50S
ID -- VDS
--7
--6 --3.0V
--5
--4
--3
--2
VGS= --2.5V
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT09328
ID -- VGS
--7
VDS= --10V
--6
--5
--4
--3
--2
--1
0
0 --1 --2 --3 --4
Gate-to-Source Voltage, VGS -- V IT09329
No.8247-2/4


Part Number ECH8302
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8302 Datasheet PDF





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