ECH8306 Datasheet | SANYO

Features - - General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --2 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1m A, VGS=0V VDS=-100V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1m A VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-50V, VGS=--10V, ID=-2A VDS=-50V, VGS=--10V, ID=-2A VDS=-50V, VGS=--10V, ID=-2A IS=--2A, VGS=0V Ratings min --100 --1 ± 10 --1.2 2.9 4.9 170 195 1600 85 72 13.5 10 190 54 33 3.6 6.0 --0.8 --1.2 225 275 --2.6 typ max Unit V µA µA V S mΩ mΩ p F p F p F ns ns ns ns n C n C n C V Marking : JH Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage....