Ordering number : ENA1182
• Best suited for load switching.
• Low ON-resistance.
• 1.8V drive.
• Halogen free compliance.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2✕0.8mm)
--55 to +150
Electrical Characteristics at Ta=25°C
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JK
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the performance, characteristics, and functions of the described products in the independent state, and are not
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