Full PDF Text Transcription for ECH8308 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ECH8308. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr Ordering number : ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 Features • • • • General-Purpose Switching Device A...
View more extracted text
con MOSFET ECH8308 Features • • • • General-Purpose Switching Device Applications Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --10 --40 1.
ECH8308 Datasheet
