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Sanyo Electric Components Datasheet

ECH8308 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA1182
ECH8308
SANYO Semiconductors
DATA SHEET
ECH8308
Features
Best suited for load switching.
Low ON-resistance.
1.8V drive.
Halogen free compliance.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
Ratings
--12
±10
--10
--40
1.6
150
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JK
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--5A
ID=--5A, VGS=--4.5V
ID=--3A, VGS=--2.5V
ID=--1A, VGS=--1.8V
min
--12
Ratings
typ
--0.4
12 21
9.2
14
22
max
--10
±10
--1.3
12.5
20
33
Unit
V
V
A
A
W
°C
°C
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62508PE TI IM TC-00001486 No. A1182-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8308 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
ECH8308
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--10A
VDS=--6V, VGS=--4.5V, ID=--10A
VDS=--6V, VGS=--4.5V, ID=--10A
IS=--10A, VGS=0V
Ratings
min typ max
Unit
2300
pF
720 pF
550 pF
24 ns
130 ns
230 ns
195 ns
26 nC
4.0 nC
7.1 nC
--0.79
--1.2 V
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
87 6 5
12 3 4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.1%
G
VDD= --6V
ID= --5A
RL=1.2Ω
D VOUT
ECH8308
P.G 50Ω S
No. A1182-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8308
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8308 Datasheet PDF





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