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Sanyo Electric Components Datasheet

ECH8411 Datasheet

N-Channel Silicon MOSFET

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www.DataSheet.co.kr
Ordering number : ENA0073
ECH8411
ECH8411
Features
Ultrahigh-speed switching.
1.8V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±12
9
36
1.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : KR
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4V
ID=2A, VGS=2.5V
ID=2A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
20
0.5
7
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
12 S
12 16 m
16 23 m
25 36 m
1740
pF
310 pF
290 pF
30 ns
170 ns
240 ns
210 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83005PE MS IM TB-00001772 No. A0073-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8411 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
ECH8411
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=9A
VDS=10V, VGS=4V, ID=9A
VDS=10V, VGS=4V, ID=9A
IS=9A, VGS=0V
Ratings
min typ max
Unit
21 nC
3.5 nC
6.2 nC
0.84
1.2 V
Package Dimensions
unit : mm
7011-002
Top View
0.3
8
5
0.15
1
0.65
2.9
4
Electrical Connection
87 6 5
12 3 4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
SANYO : ECH8
Switching Time Test Circuit
VIN
4V
0V
PW=10µs
D.C.1%
VIN
G
VDD=10V
ID=4A
RL=2.5
D VOUT
P.G 50
S ECH8411
No. A0073-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8411
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8411 Datasheet PDF






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