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Ordering number : EN9010
ECH8656
SANYO Semiconductors
DATA SHEET
ECH8656
Features
• • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
• •
ON-resistance RDS(on)1=13mΩ (typ.) Halogen free compliance Protection diode in
1.8V drive Nch + Nch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±10 7.5 40 1.3 1.
ECH8656 Datasheet
