ECH8656
ECH8656 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
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- N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
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ON-resistance RDS(on)1=13mΩ (typ.) Halogen free pliance Protection diode in
1.8V drive Nch + Nch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C
Package Dimensions unit : mm (typ) 7011A-001
Product & Package Information
- Package : ECH8
- JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
Packing Type : TL
Marking
LOT No.
1 0.65
4 0.3
Electrical Connection
8 7 6 5
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
Bot t om View
SANYO : ECH8 http://semicon.sanyo./en/network
83111PE TKIM TC-00002622 No.9010-1/4
D a t a s h e e t
.Data Sheet.co.kr
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Static Drain-to-Source On-State Resistance RDS(on)3 RDS(on)4 RDS(on)5 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1m A, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=4A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V ID=0.5A, VGS=1.8V...
