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Sanyo Electric Components Datasheet

ECH8656 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN9010
ECH8656
SANYO Semiconductors
DATA SHEET
ECH8656
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=13mΩ (typ.)
Halogen free compliance
Protection diode in
1.8V drive
Nch + Nch MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±10
7.5
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 t o 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TB
LOT No.
TL
1
0.65
4
0.3
Bot t om View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8765
1234
http://semicon.sanyo.com/en/network
83111PE TKIM TC-00002622 No.9010-1/4
Datasheet


Sanyo Electric Components Datasheet

ECH8656 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8656
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
RDS(on)5
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=7.5A
VDS=10V, VGS=4.5V, ID=7.5A
VDS=10V, VGS=4.5V, ID=7.5A
IS=7.5A, VGS=0V
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=4A
RL=2.5Ω
D VOUT
ECH8656
P.G 50Ω S
min
20
Ratings
typ
0.5
9
9.4
11
12.5
17
7
13
13.5
16
18
30
1060
180
135
17.5
120
68
80
10.8
2.1
2.9
0.74
max
1
±10
1.3
17
18
22
26
48
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ID -- VDS
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
1.8V
3.5
3.0
2.5
2.0 VGS=1.5V
1.5
1.0
0.5
0
0
0.1 0.2 0.3 0.4 0.5
Drain-to-Source Voltage, VDS -- V IT16586
ID -- VGS
10
VDS=10V
9
8
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS -- V IT12484
No.9010-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8656
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8656 Datasheet PDF






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