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Sanyo Electric Components Datasheet

FW307 Datasheet

Ultrahigh-Speed Switching Applications

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Ordering number : ENN7274
FW307
N-Channel and P-Channel Silicon MOSFETs
FW307
Ultrahigh-Speed Switching Applications
Preliminary
Features
Package Dimensions
The FW307 incorporates an N-channel MOSFET and a
P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density
mounting.
Excellent ON-resistance characteristic.
unit : mm
2129
8
[FW307]
5
1
5.0
4
1 : Source1
2 : Gate1
3 : Source2
0.2 4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
N-channel P-channel
250 --250
±30 ±30
1 --0.7
5 --3
1.7
2.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Leakage Current
Symbol
Conditions
V(BR)DSS
IDSS
IDSS
IGSS
IGSS
ID=1mA, VGS=0
VDS=250V, VGS=0
VDS=15V, VGS=0, Ta=0 to 60°C
VGS=±25V, VDS=0
VGS=±15V, VDS=0, Ta=0 to 60°C
Ratings
min typ max
Unit
250 V
100 µA
4 µA
±10 µA
±1.2 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-G1I26IM5 No.7274-1/5


Sanyo Electric Components Datasheet

FW307 Datasheet

Ultrahigh-Speed Switching Applications

No Preview Available !

FW307
Continued from preceding page.
Parameter
Symbol
Conditions
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
VGS(off)
yfs
RDS(on)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
[P-channel]
td(on)
tr
td(off)
tf
VSD
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V(BR)DSS
IDSS
IDSS
IGSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=1A, VGS=0
ID=--1mA, VGS=0
VDS=--250V, VGS=0
VDS=15V, VGS=0, Ta=0 to 60°C
VGS=±25V, VDS=0
VGS=±15V, VDS=0, Ta=0 to 60°C
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.7A
ID=--0.7A, VGS=--10V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=--1A, VGS=0
min
1.5
1.4
Ratings
typ
2.1
1.2
160
40
15
10
15
80
30
1.0
max
2.5
1.6
1.2
Unit
V
S
pF
pF
pF
ns
ns
ns
ns
V
--250
--1.5
0.7
V
--100
µA
--4 µA
±10 µA
±1.2
µA
--2.5 V
1.1 S
3 4
160 pF
45 pF
20 pF
12 ns
15 ns
90 ns
40 ns
--1.0 --1.2 V
Switching Time Test Circuit
[N-channel]
VIN
10V
0V
VIN
VDD=100V
ID=1A
RL=100
PW=10µs
D.C.1%
G
D
VOUT
[P-channel]
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --100V
ID= --0.7A
RL=142
D VOUT
FW307
P.G 50S
FW307
P.G 50S
Electrical Connection
876
5
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
(Top view)
No.7274-2/5



Part Number FW307
Description Ultrahigh-Speed Switching Applications
Maker Sanyo Semicon Device
Total Page 5 Pages
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FW307 Datasheet PDF





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