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FW306 - N- Channel Silicon MOS FET High Speed Switching

Key Features

  • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
  • Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C (N-channel) Drain to Source Breakdown Voltage Ze.

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FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs. • Low ON-state resistance.