FW306 Datasheet N- Channel Silicon Mos Fet High Speed Switching

Manufacturer: SANYO (now Panasonic)

Overview: FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE.

Datasheet Details

Part number	FW306
Manufacturer	SANYO (now Panasonic)
File Size	17.48 KB
Description	N- Channel Silicon MOS FET High Speed Switching
Datasheet	FW306_SanyoSemiconDevice.pdf

High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C (N-channel) Drain to Source Breakdown Voltage Ze.

Part Number	Description
FW307	Ultrahigh-Speed Switching Applications
FW313	Ultrahigh-Speed Switching Applications
FW340	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
FW341	General-Purpose Switching Device
FW342	General-Purpose Switching Device
FW343	General-Purpose Switching Device
FW344	Motor Driver Applications
FW349	General-Purpose Switching Device
FW359	Ultrahigh-Speed Switching Applications