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FW313 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.
  • High-density mounting. Package Dimensions unit:mm 2129 [FW313] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.8max 1 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation To.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6389 N-Channel and P-Channel Silicon MOSFETs FW313 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. · High-density mounting. Package Dimensions unit:mm 2129 [FW313] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.