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FW307 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions.
  • The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW307] 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Te.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7274 FW307 N-Channel and P-Channel Silicon MOSFETs FW307 Ultrahigh-Speed Switching Applications Preliminary Features • Package Dimensions • The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW307] 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.