K2012 - N-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2012] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP A.

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Published: Nov 19, 2014 |