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Sanyo Electric Components Datasheet

K2012 Datasheet

N-Channel Silicon MOSFET

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Ordering number:ENN4321B
N-Channel Silicon MOSFET
2SK2012
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2063A
[2SK2012]
10.0
3.2
4.5
2.8
Specifications
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25˚C
Ratings
250
±30
18
72
2.0
40
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Souce Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=250V, VGS=0
VGS=±25V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=12A
ID=12A, VGS=10V
Ratings
min typ max
Unit
250 V
±30 V
100 µA
±10 µA
1.5 2.5 V
11 18
S
0.12 0.16
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20701TS/22599TS/51193TH (KOTO) AX-9098 No.4321–1/4


Sanyo Electric Components Datasheet

K2012 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
2SK2012
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=18A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
VDD=100V
ID=12A
RL=8.33
D VOUT
G
2SK2012
P.G 50
S
Ratings
min typ max
Unit
2700
pF
450 pF
180 pF
35 ns
65 ns
210 ns
235 ns
1.0 1.5 V
36 ID -- VDS
30 4.0V
24
18
12
6
0
0
0.24
0.20
3.5V
3.0V
2.5V
4 8 12 16 20
Drain-to-Source Voltage, VDS – V ITR02353
RDS(on) -- VGS
ID=12A
Tc=25°C
0.16
0.12
0.08
0.04
0
0
2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS – V ITR02355
36
VDS=10V
32
ID -- VGS
28
24
20
16
12
8
4
0
0
0.28
0.24
12345 6
Gate-to-Source Voltage, VGS – V ITR02354
RDS(on) -- Tc
ID=12A
VGS=10V
0.20
0.16
0.12
0.08
0.04
0
--80
--40 0
40 80 120 160
Case Temperature, Tc – °C
ITR02356
No.4321–2/4


Part Number K2012
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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K2012 Datasheet PDF






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