LE28FV4001R-20 memory equivalent, 4meg (52488 x 8 bits) flash memory.
* Highly reliable 2 layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 3.3 V single-voltage power supply
* High-speed access: 200.
use erase operations that are not whole chip erase operations but rather are single sector erase operations, this sector.
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