LE28F4001CTS eeprom equivalent, 4m-bit (512k 8) flash eeprom.
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active C.
the LE28F4001C is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater then .
The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM. The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better re.
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