.
Sanyo Semicon Device
LE25FU406B - CMOS IC 4M-bit (512K X 8) Serial Flash Memory
Ordering number : EN*A1066A LE25FU406B Overview CMOS IC 4M-bit (512K×8) Serial Flash Memory The LE25FU406B is a serial interface-compatible flash .
Chingis Technology
Pm25LD010 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single.
Chingis Technology
Pm25LD020 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single.
AMIC Technology
A29040 - 512K x 8-Bit CMOS 5.0 Volt-only Uniform Sector Flash Memory
A29040 Series Preliminary 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access.
STMicroelectronics
27C800 - 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF.
ON Semiconductor
N08L6182A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L6182A is an integrated memory device containing a 8 Mbit Static Ran.
ON Semiconductor
N08L63W2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Ra.
Fujitsu
MBM29F800BA-90 - 8M (1M x 8/512K x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURE.
Mosel Vitelic Corp
V29C51000B - 512K BIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
MOSEL VITELIC V29C51000T/V29C51000B 512K BIT (65,536 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 64Kx8-bit Organ.
Mosel Vitelic Corp
V29C51000T - 512K BIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
MOSEL VITELIC V29C51000T/V29C51000B 512K BIT (65,536 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 64Kx8-bit Organ.
ST Microelectronics
M58BW016DB - 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V.
Macronix International
29F800 - 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.
Microchip Technology
24LC512 - 512K I2C Serial EEPROM
24AA512/24LC512/24FC512 512K I2C Serial EEPROM Device Selection Table Part Number VCC Range Max. Clock Frequency 24AA512 1.7-5.5V 400 kHz(1) 2.
Chingis Technology
Pm25LD512 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single.
CEL
CE3512K2 - 12GHz Super Low Noise FET
RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION Super Low Noise and High Gain Hollow (Air Cavity) Plastic .
Micross
AS8S512K32PECA - 16 MB ASYNC SRAM
iPEM 16 MB ASYNC SRAM AS8S512K32PECA 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated.
Beijing Microelectronics
B8CR512K32RH - Radiation-Hardened SRAM
Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number：B8CR512K32RH Version No. 1.0 1.1 1.2 Page of Revise Control Publish Time 1.20.2015 07.22.2015.
Cypress Semiconductor
CY62148 - 512K x 8 MoBL Static RAM
1CY 621 48 fax id: 1079 www.DataSheet4U.com PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power.
