* ide Read Mode AC Waveforms A0-A18 VALID tAVQV tAXQX VALID E tGLQV G tELQV Q0-Q15 tGHQZ Hi-Z tEHQZ AI01596B Note: BYTEV PP
27C800
115.94 KB
8 mbit 1mb x8 or 512kb x16 uv eprom and otp eprom.
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF.
📁 Related Datasheet
27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
(ATMEL)
AT27C800
Features
• • • • •
Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera.
27C800 - 8M-BIT [1M x8] CMOS EPROM
(Macronix International)
MX27C8000
8M-BIT [1M x8] CMOS EPROM
FEATURES
• • • • • •
1M x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 10.
27C800 - 8M-BIT [1M x8] CMOS EPROM
(Macronix International)
MX27C8000
8M-BIT [1M x8] CMOS EPROM
FEATURES
• • • • • •
1M x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 10.
27C801 - 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
(STMicroelectronics)
M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current.
27C010 - 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
(Fairchild)
NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
October 1998
NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM
General Des.
27C010 - 1 Megabit 128K x 8 OTP CMOS EPROM
(ATMEL)
AT27C010/L
Features
• • • • • • • • •
Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01.
27C010 - 1M (128K x 8) CHMOS EPROM
(Intel)
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27C020 - 2 Megabit (256 K x 8-Bit) CMOS EPROM
(Advanced Micro Devices)
FINAL
Am27C020
2 Megabit (256 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s Fast access time — Speed options as fast as 55 ns s Low power consu.
