27C16 - UV Erasable CMOS PROM Military Qualified
(National Semiconductor)
27C16 16 384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified
January 1989
27C16 16 384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualifi.
27C16A - 16K (2K x 8) CMOS EEPROM
(Microchip Technology)
28C16A
16K (2K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • .
27C1000 - MX27C1000
(Macronix)
MX27C1000
1M-BIT [128K x 8] CMOS EPROM
FEATURES
• • • • • •
128K x 8 organization Single +5V power supply +12.5V programming voltage Fast access tim.
27C1001 - 1 Mbit 128Kb x8 UV EPROM and OTP EPROM
(STMicroelectronics)
M27C1001
1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre.
27C1024 - 1-Megabit 64K x 16 OTP EPROM
(ATMEL)
AT27C1024
Features
• Fast Read Access Time - 45 ns • Low Power CMOS Operation •
– 100 µA max. Standby – 30 mA max. Active at 5 MHz JEDEC Standard Pack.
27C1024 - 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
(STMicroelectronics)
M27C1024
1 Mbit (64Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur.
27C1024 - 1 Megabit (65 K x 16-Bit) CMOS EPROM
(Advanced Micro Devices)
FINAL
Am27C1024
1 Megabit (65 K x 16-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s Fast access time — Speed options as fast as 55 ns s Low power cons.
27C1024 - 1M-BIT [128K x 8/64K x 16] CMOS EPROM
(Macronix International)
MX27C1100/27C1024
1M-BIT [128K x 8/64K x 16] CMOS EPROM
FEATURES
• 64K x 16 organization(MX27C1024, JEDEC pin • • • • •
out) 128K x 8 or 64K x 16 org.