LE28F4001R-20 memory equivalent, 4 meg (524288 words x 8 bits) flash memory.
* Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
* Read and write operation from a 5 V single-voltage power supply
* Sector er.
use erase operations that are not whole-chip erase operations but rather are single sector erase operations, this sector.
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