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LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM

Datasheet Summary

Description

The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM.

The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.

Features

  • CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max. ) Standby Current: 20 µA (Max. ) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max. ) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard B.

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Datasheet preview – LE28F4001CTS-12

Datasheet Details

Part number LE28F4001CTS-12
Manufacturer Sanyo Semicon Device
File Size 168.99 KB
Description 4M-Bit (512k 8) Flash EEPROM
Datasheet download datasheet LE28F4001CTS-12 Datasheet
Additional preview pages of the LE28F4001CTS-12 datasheet.

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Full PDF Text Transcription

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Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max.) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard Byte-Wide EEPROM Pinouts Packages Available LE28F4001CTS: 32-pin TSOP Normal(8×14mm) Product Description The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM.
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