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LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM

LE28F4001CTS-12 Description

Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM .
The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM.

LE28F4001CTS-12 Features

* CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max. ) Standby Current: 20 µA (Max. ) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years D

LE28F4001CTS-12 Applications

* the LE28F4001C is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater then 10 years. The LE28F4001C is best suited for applications that require reprogrammable nonvolatile mass storage of program or data memory. For all system applications, the LE28F4001

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4M-Bit 512k Flash EEPROM Sanyo Semicon Device
Sanyo Semicon Device LE28F4001CTS-12-like datasheet

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