LE28F4001CTS-12 Datasheet - Sanyo Semicon Device

LE28F4001CTS-12 4M-Bit (512k 8) Flash EEPROM

The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM. The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conv.

LE28F4001CTS-12 Features

* CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years D

LE28F4001CTS-12_SanyoSemiconDevice.pdf