* Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
* Read and write operation from a 5 V single-voltage power supply
* Sector erase function: 256 bytes per sector
* Fast access time: 150/200 ns
* Low power
* Operating curr
LE28F4001R Datasheet (219.23 KB)
LE28F4001R
Sanyo Semicon Device
219.23 KB
4 meg (524288 words x 8 bits) flash memory.
Ordering number : EN 5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series .
📁 Related Datasheet
LE28F4001C 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
LE28F4001CTS 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
LE28F4001CTS-12 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
LE28F4001M 4 MEG (524288 words x 8 bits) Flash Memory (Sanyo Semicon Device)
LE28F4001R-15 4 MEG (524288 words x 8 bits) Flash Memory (Sanyo Semicon Device)
LE28F4001R-20 4 MEG (524288 words x 8 bits) Flash Memory (Sanyo Semicon Device)
LE28F4001T 4 MEG (524288 words x 8 bits) Flash Memory (Sanyo Semicon Device)
LE28FV4001M 4MEG (52488 x 8 Bits) Flash Memory (Sanyo Semicon Device)
LE28FV4001R 4MEG (52488 x 8 Bits) Flash Memory (Sanyo Semicon Device)
LE28FV4001R-20 4MEG (52488 x 8 Bits) Flash Memory (Sanyo Semicon Device)
