LE28F4001M Datasheet - Sanyo Semicon Device

LE28F4001M 4 MEG (524288 words x 8 bits) Flash Memory

LE28F4001M Features

* Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.

* Read and write operation from a 5 V single-voltage power supply

* Sector erase function: 256 bytes per sector

* Fast access time: 150/200 ns

* Low power

* Operating curr

Datasheet Details

LE28F4001M

Sanyo Semicon Device

219.23 KB

4 meg (524288 words x 8 bits) flash memory.

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LE28F4001M Distributor