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LE28F4001CTS

4M-Bit (512k 8) Flash EEPROM

LE28F4001CTS Features

* CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years D

LE28F4001CTS General Description

The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM. The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conv.

LE28F4001CTS Datasheet (168.99 KB)

Preview of LE28F4001CTS PDF

Datasheet Details

Part number:

LE28F4001CTS

Manufacturer:

Sanyo Semicon Device

File Size:

168.99 KB

Description:

4m-bit (512k 8) flash eeprom.

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LE28F4001CTS 4M-Bit 512k Flash EEPROM Sanyo Semicon Device

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