LE28FV4001M

4MEG (52488 x 8 Bits) Flash Memory

Sanyo Semicon Device

LE28FV4001M Features

* Highly reliable 2 layer polysilicon CMOS flash EEPROM process

* Read and write operations using a 3.3 V single-voltage power supply

* High-speed access: 200 and 250 ns

* Low power

* Operating (read): 10 mA (maximum)

* Standby: 20 µA (maximum)

LE28FV4001M Datasheet (230.16 KB)

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Datasheet Details

Part number:

LE28FV4001M

Manufacturer:

Sanyo Semicon Device

File Size:

230.16 KB

Description:

4meg (52488 x 8 bits) flash memory.
Ordering number : EN
*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series .

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LE28FV4001R-20 - 4MEG (52488 x 8 Bits) Flash Memory (Sanyo Semicon Device)
Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .

LE28FV4001R-25 - 4MEG (52488 x 8 Bits) Flash Memory (Sanyo Semicon Device)
Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .

LE28F4001C - 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Writ.

LE28F4001CTS - 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Writ.

LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM (Sanyo Semicon Device)
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LE28F4001M - 4 MEG (524288 words x 8 bits) Flash Memory (Sanyo Semicon Device)
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LE28FV4001M 4MEG 52488 Bits Flash Memory Sanyo Semicon Device

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LE28FV4001M Features

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Description:

LE28FV4001M Distributor