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LE28FV4001R-25 - 4MEG (52488 x 8 Bits) Flash Memory

Features

  • Highly reliable 2 layer polysilicon CMOS flash EEPROM process.
  • Read and write operations using a 3.3 V single-voltage power supply.
  • High-speed access: 200 and 250 ns.
  • Low power.
  • Operating (read): 10 mA (maximum).
  • Standby: 20 µA (maximum).
  • Highly reliable read write.
  • Number of sector write cycles: 104 cycles.
  • Data retention: 10 years.
  • Address and data latches.
  • Sector erase function: 256 bytes per se.

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Datasheet preview – LE28FV4001R-25

Datasheet Details

Part number LE28FV4001R-25
Manufacturer SANYO (now Panasonic)
File Size 230.16 KB
Description 4MEG (52488 x 8 Bits) Flash Memory
Datasheet download datasheet LE28FV4001R-25 Datasheet
Additional preview pages of the LE28FV4001R-25 datasheet.

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Full PDF Text Transcription

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.
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