* Highly reliable 2 layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 3.3 V single-voltage power supply
* High-speed access: 200 and 250 ns
* Low power
* Operating (read): 10 mA (maximum)
* Standby: 20 µA (maximum)
LE28FV4001R Datasheet (230.16 KB)
LE28FV4001R
Sanyo Semicon Device
230.16 KB
4meg (52488 x 8 bits) flash memory.
Ordering number : EN 5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series .
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