LE28FV4001R
Key Features
- Highly reliable 2 layer polysilicon CMOS flash EEPROM process
- Read and write operations using a 3.3 V single-voltage power supply
- High-speed access: 200 and 250 ns
- Low power — Operating (read): 10 mA (maximum) — Standby: 20 µA (maximum)
- Highly reliable read write —Number of sector write cycles: 104 cycles — Data retention: 10 years
- Address and data latches
- Sector erase function: 256 bytes per sector
- Self-timer erase/program
- Hardware and software data protection functions
- Pin assignment conforms to the JEDEC byte-wide EEPROM standard
