LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001T Features
* Highly reliable 2 layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 3.3 V single-voltage power supply
* High-speed access: 200 and 250 ns
* Low power
* Operating (read): 10 mA (maximum)
* Standby: 20 µA (maximum)
