Datasheet4U.com

LE28F4001T - 4 MEG (524288 words x 8 bits) Flash Memory

Sanyo Semicon Device

📥 Download Datasheet

LE28F4001T Datasheet Preview — Preview of LE28F4001T PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	LE28F4001T
Manufacturer	Sanyo Semicon Device
File Size	219.23 KB
Description	4 MEG (524288 words x 8 bits) Flash Memory
Datasheet	LE28F4001T_SanyoSemiconDevice.pdf

LE28F4001T Product details

Features

Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
Read and write operation from a 5 V single-voltage power supply.
Sector erase function: 256 bytes per sector.
Fast access time: 150/200 ns.
Low power.
Operating current (read): 25 mA (maximum).
Standby current: 20 µA (maximum).
Highly reliable read and write operations.
Sector write cycles: 104 cycles.
Data retention time: 10 y.

📁 LE28F4001T Similar Datasheet

LE28DW3212AT-80B - 32 Megabit FlashBank Memory (Sanyo)
LE28DW8102T - 8 Megabit FlashBank Memory (Sanyo)
LE24162LBXA - Two Wire Serial Interface EEPROM (ON Semiconductor)
LE24163LBXA - 16kb I2C CMOS Serial EEPROM (ON Semiconductor)
LE2416DXA - EEPROM (ON Semiconductor)
LE2416RDXA - EEPROM (ON Semiconductor)
LE2416RLBXA - Two Wire Serial Interface EEPROM (ON Semiconductor)
LE2464C - 64-kb I2C CMOS Serial EEPROM (ON Semiconductor)

Other Datasheets by Sanyo Semicon Device

LE28F4001C - 4M-Bit (512k 8) Flash EEPROM
LE28F4001CTS - 4M-Bit (512k 8) Flash EEPROM
LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM
LE28F4001M - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R-15 - 4 MEG (524288 words x 8 bits) Flash Memory

Published: Mar 22, 2005 |