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ECH8605 - Ultrahigh Speed Switching Applications

Features

  • Package Dimensions unit : mm 2206A [ECH8605] 0.25 0.3 8 5 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.65 2.9 Top View 0.25 1 4 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a c.

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Datasheet Details

Part number ECH8605
Manufacturer Sanyo Semiconductor Corporation
File Size 61.51 KB
Description Ultrahigh Speed Switching Applications
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    www.DataSheet4U.com Ordering number : ENN7405 ECH8605 P-Channel Silicon MOSFET ECH8605 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2206A [ECH8605] 0.25 0.3 8 5 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.65 2.9 Top View 0.25 1 4 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.9 0.
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