Description
With TO-220 package - High power dissipation APPLICATIONS - Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION SYMBOL PARAMETER 2N5293 VCBO Collector-base voltage 2N5295 2N5297 2N5293 VCEO Collector-emitter voltage 2N5295 2N5297 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5293 VCEO(SUS) Collector-emitter sustaining voltage 2N5295 2N5297 2N5293 VCEsat Collector-emitter saturation voltage 2N5295 2N5297 2N5293 VBE Base-emitter on voltage 2N5295 2N5297 2N5293/5297 ICEV Collector cut-off current 2N5295 ICER Collector cut-off current 2N5293/5297 2N5295 IEBO Emitter cut-off current 2N5293/5297 2N5293 hFE DC current gain 2N5295 2N5297 fT Transition frequency 2N5293 ton Turn-on time 2N5295 2N5297 2N5293 toff Turn-off time 2N5295 2N5297 VEB=5V; IC=0 IC=0.1A ;IB=0 SYMBOL 2N5293 2N5295 2N5297 CONDITIONS MIN 70 40 60 TYP.
