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SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications
PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N6034 VCBO Collector-base voltage 2N6035 2N6036 2N6034 VCEO Collector-emitter voltage 2N6035 2N6036 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -4 -8 -0.