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SavantIC

2N6131 Datasheet Preview

2N6131 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High power dissipation
·Complement to PNP type :
2N6132 2N6133 2N6134
APPLICATIONS
·Power amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2N6129 2N6130 2N6131
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6129
VCBO
Collector-base voltage 2N6130
2N6131
2N6129
VCEO
Collector-emitter voltage 2N6130
2N6131
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
UNIT
V
V
V
A
A
W
MAX
2.5
UNIT
/W




SavantIC

2N6131 Datasheet Preview

2N6131 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6129 2N6130 2N6131
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6129
2N6130 IC=0.1A ;IB=0
2N6131
VCEsat
Collector-emitter
saturation voltage
2N6129
2N6130 IC=7A;IB=1.2A
2N6131
VBE Base-emitter on voltage
IC=2.5A ; VCE=4V
ICEV
Collector
cut-off current
2N6129
2N6130
2N6131
VCE=40V;VBE=1.5V
TC=150
VCE=60V;VBE=1.5V
TC=150
VCE=80V; VBE=1.5V
TC=150
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2.5A ; VCE=4V
fT Transition frequency
IC=0.2A ; VCE=4V
MIN TYP. MAX UNIT
40
60 V
80
1.4
V
1.8
1.4 V
0.5
3.0
mA
0.5
3.0
0.5
3.0
mA
1.0 mA
20 100
2.5 MHz
2


Part Number 2N6131
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6131 Datasheet PDF





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