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2N6131 Datasheet Silicon Power Transistor

Manufacturer: SavantIC

Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power.

Download the 2N6131 datasheet PDF. This datasheet also includes the 2N6129 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number 2N6131
Manufacturer SavantIC
File Size 120.20 KB
Description Silicon Power Transistor
Download 2N6131 Download (PDF)

General Description

·With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6129 2N6130 2N6131 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6129 VCBO Collector-base voltage 2N6130 2N6131 2N6129 VCEO Collector-emitter voltage 2N6130 2N6131 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 7 3 50 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 2N6131 2N6129 VCEsat Collector-emitter saturation voltage IC=0.1A ;IB=0 SYMBOL 2N6129 2N6130 2N6131 CONDITIONS MIN 40 60 80 TYP.

MAX UNIT V 1.4 2N6130 2N6131 IC=7A;IB=1.2A 1.8 IC=2.5A ;

VCE=4V 2N6129 VCE=40V;VBE=1.5V TC=150 VCE=60V;VBE=1.5V TC=150 VCE=80V;