2SA1064 Overview
Description
With TO-3 package - Low collector saturation voltage - Complement to type 2SC2488 - High transition frequency APPLICATIONS - For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -8 -12 100 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-8A ;IB=-0.8A IC=-8A;VCE=-5V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V 40 20 MIN -150 2SA1064 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -2.0 -2.5 -1 -2 280 V V mA mA 50 MHz hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1064 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.