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2SA636 - Silicon POwer Transistors

Datasheet Details

Part number 2SA636
Manufacturer SavantIC
File Size 137.59 KB
Description Silicon POwer Transistors
Datasheet download datasheet 2SA636 Datasheet

General Description

·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 Open collector Open base -60 -5 -3 -5 -0.6 10 W V A A A CONDITIONS Open emitter VALUE -70 -45 V UNIT V SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-45V;

IE=0 VEB=-3V;

IC=0 IC=-20mA ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA636.