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SavantIC

2SA636 Datasheet Preview

2SA636 Datasheet

Silicon POwer Transistors

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Open emitter
Collector-emitter voltage
2SA636
2SA636A
Open base
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
Open collector
TC=25
Ta=25
VALUE
-70
-45
-60
-5
-3
-5
-0.6
10
1.2
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SA636 Datasheet Preview

2SA636 Datasheet

Silicon POwer Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
ICBO Collector cut-off current
VCB=-45V; IE=0
IEBO Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IC=-0.1A ; VCB=-5V
Product Specification
2SA636 2SA636A
MIN TYP. MAX UNIT
-0.5 -2.0
V
-0.8 -2.0
V
-1 µA
-1 µA
20
40 250
60 pF
45 MHz
hFE-2 classifications
NM L
K
40-60 50-100 80-160 120-250
2


Part Number 2SA636
Description Silicon POwer Transistors
Maker SavantIC
PDF Download

2SA636 Datasheet PDF






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