SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA814
2SA815
IC=-10mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1.0mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBE Base-emitter on voltage
ICBO Collector cut-off current
IC=-500mA ; VCE=-5V
VCB=-50V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-5V
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
COB Collector output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-150mA ; VCE=-5V
Product Specification
2SA814 2SA815
MIN TYP. MAX UNIT
-120
-100
V
-5 V
-0.5 V
-1.0 V
-1.0 µA
-1.0 µA
70 240
40
30 pF
10 30
MHz
hFE-1 Classifications
OY
70-140
120-240
2
